NVBG020N120SC1 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NVBG020N120SC1	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVBG020N120SC1
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.7W;468W
Total Gate Charge (Qg@Vgs): 220nC@20V
Drain Source Voltage (Vdss): 1.2kV
Input Capacitance (Ciss@Vds): 2943pF@800V
Continuous Drain Current (Id): 8.6A;98A
Gate Threshold Voltage (Vgs(th)@Id): 4.3V@20mA
Reverse Transfer Capacitance (Crss@Vds): 24pF@800V
Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@20V,60A
Package: D2PAK-7L
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 20V
Vgs (Max): +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 2943pF @ 800V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number: NVBG02
detail: N-Channel 1200V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7